Plasmonic nanotechnology for photothermal applications – an evaluation

• A. R. Indhu,
• L. Keerthana and
• Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

Selected properties of Al_xZn_yO thin films prepared by reactive pulsed magnetron sputtering using a two-element Zn/Al target

• Witold Posadowski,
• Artur Wiatrowski,
• Jarosław Domaradzki and
• Michał Mazur

Beilstein J. Nanotechnol. 2022, 13, 344–354, doi:10.3762/bjnano.13.29

• so far by reactive sputtering of Zn/Al metal targets [8][10][12][13][14][19][20][21] using an argon/oxygen atmosphere. There are also examples where such films were deposited by co-sputtering of two independently powered ZnO and Al targets [10][20][21]. This method of sputtering allowed the

• working and reactive gases, namely argon and oxygen, with a ratio of 70:30, was introduced into the vacuum chamber through a set of needle valves (Figure 1). The total pressure during reactive sputtering processes was established at about pAr+O2 = 3 × 10−3 mbar. The power supplying the target (the

Sputtering onto liquids: a critical review

• Anastasiya Sergievskaya,
• Adrien Chauvin and
• Stephanos Konstantinidis

Beilstein J. Nanotechnol. 2022, 13, 10–53, doi:10.3762/bjnano.13.2

• the surface of the sputter target, whose temperature is gradually increasing because of ion bombardment, emits IR photons. This radiation is detected at the substrate location and contributes to an increase of the substrate surface temperature as well [43]. In the case of reactive sputtering

• reported in [56] where zinc (Zn) and tin/copper (Sn/Cu) targets are both co-sputtered in a reactive H2S/Ar reactive plasma for the synthesis of Cu2ZnSnS4 (CZTS) coatings. In the case of reactive sputtering, MFCs manage the flow (usually expressed in standard cubic centimeters per minute, sccm). This is a

• the target surface chemistry and the ISEE change. Besides, once the poisoned regime is reached, compound molecules can be sputtered as demonstrated by mass spectrometry analysis of the plasma ion chemistry during the reactive sputtering of Ti in Ar/N2 [63] or in Ar/O2 plasmas [64]. In these

Thickness-dependent photoelectrochemical properties of a semitransparent Co₃O₄ photocathode

• Malkeshkumar Patel and
• Joondong Kim

Beilstein J. Nanotechnol. 2018, 9, 2432–2442, doi:10.3762/bjnano.9.228

• favourable HER properties [20]. We also developed compact Co3O4 films by a reactive sputtering method, in which sputtered Co particles were converted into a compact Co3O4 film by controlling the flowing O2 gas, to offer a self-powered ultraviolet photodetector [17] and semitransparent photovoltaics [39]. It

• Co3O4 film are primarily due to its enhanced porosity and optical absorption. We also studied the thickness dependent optical and electrical properties of Co3O4 film grown by reactive sputtering [17]. In fact, we can see the systematic variation of Mott–Schottky characteristics, and so of the VFB and NA

Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

• Massimiliano Lucci,
• Ivano Ottaviani,
• Matteo Cirillo,
• Fabio De Matteis,
• Roberto Francini,
• Vittorio Merlo and
• Ivan Davoli

Beilstein J. Nanotechnol. 2017, 8, 539–546, doi:10.3762/bjnano.8.58

• Methods One reliable process to deposit NbN and AlN films consists of using a reactive sputtering chamber [4][5][6][7][8]. When such a technique is employed, however, the quality of the films depends on several parameters: the purity of the deposition chamber, the reciprocal positions of source and

• system-dependent and provides objective advantages during the reactive sputtering deposition. We have shown that for the NbN superconducting films, this method gives the possibility to increase or to reduce the flux of nitrogen and to obtain the best chemical composition within the constraints imposed by

Advances in the fabrication of graphene transistors on flexible substrates

• Gabriele Fisichella,
• Stella Lo Verso,
• Silvestra Di Marco,
• Vincenzo Vinciguerra,
• Emanuela Schilirò,
• Salvatore Di Franco,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Amaia Zurutuza,
• Alba Centeno,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2017, 8, 467–474, doi:10.3762/bjnano.8.50

• dielectric thickness. The Al-coated Si wafer was prepared by depositing a 200 nm thick Al film by RF reactive sputtering with a surface roughness (measured by AFM, image not reported) of about 4.3 nm. The RMS roughness values obtained for both the LT Al2O3 (Figure 1c, left) and the ST Al2O3 (Figure 1c, right

Performance of natural-dye-sensitized solar cells by ZnO nanorod and nanowall enhanced photoelectrodes

• Saif Saadaoui,
• Mohamed Aziz Ben Youssef,
• Moufida Ben Karoui,
• Rached Gharbi,
• Emanuele Smecca,
• Vincenzina Strano,
• Salvo Mirabella,
• Alessandra Alberti and
• Rosaria A. Puglisi

Beilstein J. Nanotechnol. 2017, 8, 287–295, doi:10.3762/bjnano.8.31

• ZnO NWs was also applied by the deposition of a thin TiO2 layer by reactive sputtering to improve the cell performance. The application of this layer increased the overall short circuit current Jsc by seven times from 2.45 × 10−3 mA/cm2 to 1.70 × 10−2 mA /cm2. Keywords: DSSCs; I–V measurement

Effect of SiN_x diffusion barrier thickness on the structural properties and photocatalytic activity of TiO₂ films obtained by sol–gel dip coating and reactive magnetron sputtering

• Mohamed Nawfal Ghazzal,
• Eric Aubry,
• Nouari Chaoui and
• Didier Robert

Beilstein J. Nanotechnol. 2015, 6, 2039–2045, doi:10.3762/bjnano.6.207

• (reactive sputtering) are affected differentially by the intercalating SiNx diffusion barrier. Increasing the thickness of the SiNx diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol–gel process. However, TiO2 obtained using the reactive sputtering method

• films obtained by each process was discussed. Keywords: diffusion barrier; photocatalysis; reactive sputtering; SiNx; sol–gel; titanium dioxide film; TiO2; Introduction Titanium dioxide thin films in active phase (mostly anatase) have been widely studied due to their ability to produce strong oxidant

• plasma-enhanced chemical vapor deposition, respectively. In this paper, we studied the effect of the SiNx thickness on thin TiO2 layers coated by either a soft chemistry (sol–gel) or physical (reactive sputtering) method. In earlier work, we studied the concentration of Na+ ions as a function of the SiNx

Focused electron beam induced deposition: A perspective

• Michael Huth,
• Fabrizio Porrati,
• Christian Schwalb,
• Marcel Winhold,
• Roland Sachser,
• Maja Dukic,
• Jonathan Adams and
• Georg Fantner

Beilstein J. Nanotechnol. 2012, 3, 597–619, doi:10.3762/bjnano.3.70

• , carbonaceous matrix. In DLC thin-film growth, which is mostly done by reactive sputtering in a mixed Ar and acetylene gas atmosphere from a metallic target, analogous observations are made with regard to the microstructure depending on the miscibility of the target metal with carbon. The granular